With the development of electric vehicle, smart grid, nuclear power, solar energy, wind energy and other energy fields, as well as navigation, aviation, aerospace, high-speed rail transit and other technologies, higher requirements are put forward for the performance of power devices. At present, power devices based on silicon materials have approached the theoretical limit determined by the characteristics of the materials themselves with the improvement of their structure design and manufacturing process. The third generation semiconductor materials can replace the first generation semiconductor materials silicon to meet higher demand in the future and will be widely used in industry.
       The third generation semiconductor materials have wider band gap, higher breakdown electric field, thermal conductivity, electron saturation rate and higher radiation resistance. They are suitable for making high temperature, high frequency, radiation resistance and high power devices. The representative materials are silicon carbide, gallium nitride, zinc oxide, diamond and aluminum nitride. At present, the most mature and potential third-generation semiconductor material is silicon carbide, which is superior to silicon in various indicators. Its band gap is almost three times as wide as silicon. The theoretical working temperature can reach 600 C, which is much higher than the working temperature of silicon devices.