Silicon carbide is one of the main representatives of the third generation semiconductor. It has significant performance advantages such as wide band gap, high limit operating temperature, high critical breakdown electric field strength and thermal conductivity. It is popular in electric vehicles, power supply, military industry, aerospace and other fields. It opens up new application possibilities for the development of many industries and is highly expected by the industry.
      From the perspective of industrial chain, silicon carbide includes single crystal substrates, epitaxial wafers, device design, device manufacturing and other links, but at present the global silicon carbide market is basically monopolized by foreign enterprises.
      In the global market, single crystal substrates enterprises mainly include Cree, Dow Corning, SiCrystal, II-VI, Nippon Steel Sumitomo, Norstel, Dow Corning, II-VI, Norstel, Cree, Roma, Mitsubishi Motor, Infineon and so on. In terms of devices, most of the global market share is divided up by Infineon, Cree, Roma, Italian-French Semiconductor and a few other enterprises.
      Because of the strong correlation between silicon carbide industry links such as chip performance and material, structure design and manufacturing process, many enterprises still choose to adopt IDM mode. For example, Rom and REE cover the whole industrial chain links of silicon carbide substrates, epitaxies, devices and modules. Cree occupies about 40% of the substrate Market and about 23% of the device market.
      In fact, the whole silicon carbide industry has not yet entered a mature stage, but international manufacturers have achieved breakthroughs in the bottleneck of mass production technology in many links, and have already scratched their hands and set off a big war. The domestic silicon carbide industry is still in its infancy, and there is still a gap with the international level.
      Nowadays, SiC devices have been applied in photovoltaic inverters, vehicle chargers, charging piles and other fields in China, but most SiC power devices in the domestic market rely on imports, mainly Cree, Infineon, Roma and so on.
      However, in recent years, a relatively complete SiC industrial chain system has been initially established in China, including IDM manufacturers such as Zhongche Electric, Century Golden Light, Tyco Tianrun, Yangjie Electronics, Shandong Tianyue, Tianke Heda, Tongguang Crystals, etc., and epitaxy enterprises such as Tianyu Semiconductor, HanTiancheng, etc. Some manufacturers have made phased progress.
      For single crystal substrates, commercial production of 4-inch substrates can be realized in China at present. Shandong Tianyue, Tiankeheda and Tongguang crystals have all completed the research and development of 6-inch substrates, and China Electrical Equipment has developed 6-inch semi-insulating substrates.
      In terms of epitaxial wafers, both Hantian and Tianjin Semiconductors can supply 4-6 inch epitaxial wafers in China, and 13 and 55 of China Electrical Science have internal supply of epitaxial wafer production departments.
      In terms of devices, 600-3300 V SiC SBD has been applied in batches in China, and some enterprises have developed 1200V/50A SiC MOSFET; Tyco Tianrun has built the first SiC device production line in China, which covers the voltage range of 600V-3300V; and the 6-inch SiC production line of Zhongchao Electric Company has also been successfully manufactured in the first batch of chips in January this year.
      In terms of modules, 1200V/50-400A full SiC power module and 600-1200V/100-600A hybrid SiC power module have been developed in China. On September 18, Xiamen Core Luminous China's first SiC IPM production line was officially put into operation.
      Overall, the domestic SiC industry chain covering all sectors has initially formed. With the support of the central and local government policies and driven by market demand, domestic enterprises are trying to catch up with each other.